GB/T 11093-1989
Replaced
GB/T 1551-2009
Replaced
National standards
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Basic Information
Standard Code:
GB/T 1551-2009
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
19 pages
Scope
This method specifies the method of measuring the resistivity of silicon single crystals using the direct four-probe method. This method is suitable for measuring the resistivity of silicon single crystals whose sample thickness and the distance from the edge of the sample to any probe endpoint are both greater than 4 times the probe spacing, as well as measuring the resistivity of silicon single wafers with a diameter greater than 10 times the probe spacing and a thickness less than 4 times the probe spacing. The range of silicon single crystal resistivity that can be measured by this method is 1×10 -3 Ω·cm to 3×10 3 Ω·cm.
Development Information
Replace the following standards
Superseded by the following standards
Adopt standards
SEMI MF 84-1105
SEMI MF 397-1106
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced