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GB/T 6619-2009 Active
GB/T 6619-2009 Test methods for bow of silicon wafers
Abstract
This standard specifies the contact-based measurement method for the bending degree of silicon single-crystal cutting wafers, grinding wafers, and polishing wafers (hereinafter referred to as silicon wafers).
This standard is applicable to measuring the bending degree of circular silicon wafers with a diameter of not less than 25 mm, a thickness of not less than 180 μm, and a diameter-to-thickness ratio of not more than 250. The purpose of this testing method is to be used for incoming material inspection and process control. This standard is also applicable to measuring the bending degree of other semiconductor wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 6619-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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