GB/T 6619-2009 Active National standards

GB/T 6619-2009 Test methods for bow of silicon wafers

GB/T 6619-2009 Test methods for bow of silicon wafers

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6619-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 10 pages

Scope

This standard specifies the contact-based measurement method for the bending degree of silicon single-crystal cutting wafers, grinding wafers, and polishing wafers (hereinafter referred to as silicon wafers).
This standard is applicable to measuring the bending degree of circular silicon wafers with a diameter of not less than 25 mm, a thickness of not less than 180 μm, and a diameter-to-thickness ratio of not more than 250. The purpose of this testing method is to be used for incoming material inspection and process control. This standard is also applicable to measuring the bending degree of other semiconductor wafers.

Development Information

Word Count: 16 Thousand words Pages: 10 pages

Replace the following standards

GB/T 6619-1995 Test methods for bow of silicon slices

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Adopt standards

SEMI MF534-0706

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06