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GB/T 8760-2006
GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density
Abstract
This standard is applicable to the measurement of dislocation density in GaAs single crystals with a dislocation density of (0 to 100,000) dislocations/cm2. The detection surfaces are the {111} and {100} surfaces.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 8760-2006 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | Comprehensive Testing of Metal Materials |
| Implement Date | 2006-11-01 |
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