GB/T 14140.1-1993
Replaced
GB/T 8760-2006
Replaced
National standards
GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density
GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density
Basic Information
Standard Code:
GB/T 8760-2006
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
7 pages
Scope
This standard is applicable to the measurement of dislocation density in GaAs single crystals with a dislocation density of (0 to 100,000) dislocations/cm2. The detection surfaces are the {111} and {100} surfaces.
Development Information
Replace the following standards
Superseded by the following standards
Related Standards
GB/T 14140.2-1993
Replaced
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 15615-1995
Abolished
GB/T 15615-1995 Test method for measuring flexure strength of silicon slices
GB/T 16481-1996
Abolished
GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth
GB/T 1550-1997
Replaced
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced