GB/T 24581-2022 Active National standards

GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method

GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method

Publish Date: 2022-03-09 Implement Date: 2022-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 24581-2022

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2022-03-09

Implement Date: 2022-10-01

Pages: 9 pages

Scope

This document describes the method of determining the impurity content of Group III and Group V elements in silicon single crystals using low-temperature Fourier transform infrared spectroscopy.
This document is applicable to the determination of the impurity content of Group III and Group V elements (aluminum (Al), antimony (Sb), arsenic (As), boron (B), gallium (Ga), indium (In), and phosphorus (P)) in silicon single crystals. The measurement range of each element (in terms of atomic number) is 1.0×10 10 cm -3 to 4.1×10 14 cm -3 .

Development Information

Word Count: 20 Thousand words Pages: 9 pages

Replace the following standards

GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities

Referenced Standards

GB/T 8322-1987 Molecular absorption spectrometry—Terminology GB/T 8322-2008 Molecular absorption spectrometry—Terminology GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy

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