T/CIE 119-2021 Test method and procedure of atmospheric-neutron induced single event effects in semiconductor devices

Scope

This document establishes the methods and procedures for conducting accelerated tests of atmospheric single-particle effects on semiconductor devices using the Spallation Neutron Source.
This document is applicable to the detection of single-particle effect sensitivity of semiconductor integrated circuits and semiconductor discrete devices in aviation, ground, and other application environments. In these environments, neutrons are primarily from the interaction of initial high-energy cosmic rays with the atmosphere, mainly thermal neutrons and high-energy neutrons with energies above 1 MeV.
The single-particle effects applicable to this document include single-particle flip caused by atmospheric neutrons in semiconductor devices, single-particle transients, single-particle functional interruptions, single-particle locking, single-particle burnout, and single-particle gate penetration.
This document is not applicable to single-particle effects caused by alpha particles.

Development Information

Referenced Standards

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