GB/T 24578-2015 Replaced National standards

GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy

Publish Date: 2015-12-10 Implement Date: 2017-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 24578-2015

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2015-12-10

Implement Date: 2017-01-01

Pages: 16 pages

Scope

1.1 This standard specifies a method for quantitatively determining the elemental surface density on the surface layer of silicon polished substrates using total reflection X-ray fluorescence spectrometry. This standard is applicable to polished monocrystalline silicon wafers and epitaxial wafers (hereinafter referred to as silicon wafers), particularly for the determination of contaminant elemental surface densities in the natural oxide layer or chemically grown oxide layer on silicon wafers after cleaning. The measurement range is 109 atoms/cm2 to 1015 atoms/cm2. This standard is also applicable to the determination of metal contamination on the surface of mirror-polished crystals of other semiconductor materials such as gallium arsenide, silicon carbide, and SOI wafers.
1.2 For a good mirror-polished surface, the detectable depth is approximately 5 nm, and the analysis depth increases with the improvement of surface roughness.
1.3 This method can detect elements with atomic numbers 16 (S) to 92 (U) in the periodic table, particularly suitable for determining the following elements: potassium, calcium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, molybdenum, palladium, silver, tin, tantalum, tungsten, platinum, mercury, and lead.
1.4 The detection limit of this method depends on the atomic number, excitation energy, X-ray flux of the excitation beam, background integration time of the equipment, and blank value. For constant equipment parameters, the detection limit is a function of the element's atomic number, with a variation of more than two orders of magnitude. The relationship between repeatability and detection limit is described in Appendix A.
1.5 This method is non-destructive and complementary to other testing methods. For comparison with different surface metal testing methods and calibration of samples, please refer to Appendix B.