GB/T 24578-2009 Replaced National standards

GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 24578-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 11 pages

Scope

1.1 This standard specifies the test method for the full reflection X-ray fluorescence spectroscopy of metal contamination on the surface of silicon wafers. This method uses a monochromatic X-ray source and full reflection X-ray fluorescence spectroscopy to quantitatively determine the elemental surface density of the surface layer of polished single-crystal silicon substrates. 1.2 This standard is applicable to N-type and P-type polished silicon wafers, epitaxial wafers, and other mirror-polished silicon wafers. It is particularly suitable for determining the surface density of contaminating elements in the natural oxide layer of silicon wafers after cleaning, or in the oxide layer grown by chemical methods.