T/COS 029-2025 Methods for chemical analysis of high silicon aluminum alloy for electronic packaging Determination of trace impurity elements contents—Dlow discharge mass spectrometry
T/COS 029-2025 Methods for chemical analysis of high silicon aluminum alloy for electronic packaging Determination of trace impurity elements contents—Dlow discharge mass spectrometry
Basic Information
Scope
This document specifies the determination method for trace impurity elements in high-silicon aluminum alloys (with a silicon content of ≥40%) used in electronic packaging. This document is applicable to the determination of trace impurity elements in high-silicon aluminum alloys (with a silicon content of ≥40%) used in electronic packaging. The determination scope covers all impurity elements except gaseous elements, with a mass fraction of 0.1 to 500, and after being corrected by standard samples, accurate quantitative analysis of the samples can be carried out. 1. Scope 2. Normative reference documents 3. Terms and definitions 3.1 Background blank samples 3.2 Mass-corrected standard samples 3.3 Instrument detector-corrected standard samples 3.4 ICE 3.5 Semi-quantitative analysis method 4. Principle 5. Reagents and materials 5.1 Anhydrous ethanol (ρ approximately 0.789 g/mL), ultra-pure. 5.2 Hydrochloric acid (ρ approximately 1.19 g/mL), ultra-pure. 5.3 Nitric acid (ρ approximately 1.42 g/mL), ultra-pure. 5.4 Hydrofluoric acid (ρ approximately 1.19 g/mL), ultra-pure. 5.5 Aqua regia (1+3) 5.6 Hydrochloric acid (1+1) 5.7 Argon gas 5.8 High-silicon aluminum alloy standard materials 6. Instrumentation and equipment 6.1 Glow discharge mass spectrometer (GDMS) 6.2 Sample preparation equipment 7. Samples 7.1 Samples should be uniform and representative 7.2 Conventional rod-shaped or sheet-shaped metal samples 8. Test procedures 8.1 Instrument preparation 8.2 Determination 8.3 Determination of relative sensitivity factors 8.4 Sample measurement 9. Data processing 10. Precision 11. Test report