GB/T 42709.5-2023 Semiconductor devices—Micro-electromechanical devices—Part 5:RF MEMS switches
GB/T 42709.5-2023 Semiconductor devices—Micro-electromechanical devices—Part 5:RF MEMS switches
Basic Information
Scope
This document defines the terms, definitions, and symbols used to evaluate and determine the basic ratings and characteristics of radio frequency MEMS switches, and describes the parameter testing methods. This document is applicable to various types of radio frequency MEMS switches. A general description of radio frequency MEMS switches is provided in Appendix A. Classified by contact method, they include DC contact type switches and capacitive contact type switches; classified by structure, they include series switches and parallel switches, and a description of the geometric structure of radio frequency MEMS switches is provided in Appendix B; classified by switching network, they include single-pole single-throw switches, single-pole double-throw switches, and double-pole double-throw switches; classified by drive method, they include electrostatic drive switches, thermoelectric drive switches, electromagnetic drive switches, and piezoelectric drive switches. Radio frequency MEMS switches are widely used in multi-band or multi-mode mobile phones, intelligent radar systems, reconfigurable radio frequency devices and systems, SDR (Software Defined Radio) phones, testing equipment, tunable devices and systems, and satellites. An application description of radio frequency MEMS switches is provided in Appendix E.