GB/T 14140.1-1993
Replaced
GB/T 11068-2006
Active
National standards
GB/T 11068-2006 Gallium arsenide epitaxial layer—Determination of carrier concentration voltage-capacitance method
GB/T 11068-2006 Gallium arsenide epitaxial layer—Determination of carrier concentration voltage-capacitance method
Basic Information
Standard Code:
GB/T 11068-2006
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
7 pages
Scope
This standard specifies the method for measuring the carrier concentration and capacitance-voltage of gallium arsenide epitaxial layers, which is suitable for measuring the carrier concentration in the base material of gallium arsenide epitaxial layers. The measurement range is 1×1014 cm-3 to 5×1017 cm-3.
Development Information
Replace the following standards
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GB/T 16481-1996
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GB/T 1550-1997
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GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced