GB/T 6256-1986
Active
T/IAWBS 022-2024
Active
Group standards
T/IAWBS 022-2024 SiC MOSFET threshold voltage testing method - Current source single point testing method
T/IAWBS 022-2024 SiC MOSFET threshold voltage testing method - Current source single point testing method
Price:
$ 20.00
Basic Information
Standard Code:
T/IAWBS 022-2024
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Diode
Publish Date:
2024-12-23
Implement Date:
2024-12-30
Scope
Main technical content: This document specifies the test method for the threshold voltage of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs). This document is applicable to the measurement of the threshold voltage of SiC MOSFETs, and includes the test principle, test circuit, and test conditions.
Development Information
Related Standards
GB/T 12300-1990
Active
GB/T 12300-1990 Test methods of safe operating area for power transistors
GB/T 16468-1996
Active
GB/T 16468-1996 Series programmes for static induction transistors
GB/T 6218-1996
Active
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications
GB/T 7577-1996
Active
GB/T 7577-1996 Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 17007-1997
Abolished