T/ZJATA 0017-2023 Active Group standards

T/ZJATA 0017-2023 Chemical Vapor Deposition (CVD) for the preparation of silicon carbide semiconductor materials and external growth equipment

Publish Date: 2023-06-20 Implement Date: 2023-07-20 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/ZJATA 0017-2023

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Integrated Electromechanical Components

Publish Date: 2023-06-20

Implement Date: 2023-07-20

Scope

Scope: This document specifies the product classification, marking, composition, and basic parameters, operating conditions, technical requirements, test methods, inspection rules, and marking of chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials (hereinafter referred to as silicon carbide epitaxy equipment). This document applies to silicon carbide epitaxy equipment used for processing 100 mm (4 inches), 150 mm (6 inches), and 200 mm (8 inches) SiC wafers by CVD technology. Main technical content: This document includes product classification, operating conditions, technical requirements, test methods, inspection rules, marking, packaging, transportation, and storage requirements for chemical vapor deposition (CVD) epitaxy equipment (hereinafter referred to as "epitaxy equipment"). It provides unified technical parameters and evaluation methods for the epitaxy equipment's reaction chamber system, temperature control system, heating system, vacuum system, and processing (SiC epitaxy wafer) quality indicators. By controlling key parameters such as reliability, processing efficiency, temperature, pressure, and flow rate, the accuracy and safety of the equipment are ensured.