GB/T 25188-2010 Active National standards

GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy

GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy

Publish Date: 2010-09-26 Implement Date: 2011-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 25188-2010
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Basic standards and general methods
ICS Name: Chemical analysis
Publish Date: 2010-09-26
Implement Date: 2011-08-01
Pages: 9 pages

Scope

This standard specifies a method for accurately measuring the thickness of the ultra-thin silicon oxide layer on the surface of silicon wafers, namely X-ray photoelectron spectroscopy (XPS). This standard is applicable to the accurate measurement of the thickness of the ultra-thin silicon oxide layer prepared on the surface of silicon wafers by thermal oxidation; typically, the silicon oxide layer thickness applicable to this standard is not greater than 6 nm.

Development Information

Word Count: 13 Thousand words Pages: 9 pages

Referenced Standards

Related Standards

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