GB/T 8757-2006 Active National standards

GB/T 8757-2006 Determination of carrier concentration in gallium arsenide by the plasma resonance minimum

Publish Date: 2006-07-18 Implement Date: 2006-11-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 8757-2006

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: Comprehensive Testing of Metal Materials

Publish Date: 2006-07-18

Implement Date: 2006-11-01

Pages: 4 pages

Scope

This standard is applicable to the measurement of the carrier concentration in GaAs single crystals. The measurement range is: n-GaAs: 1.0×10 17 cm -3 to 1.0×10 19 cm -3 p-GaAs: 2.0×10 18 cm -3 to 1.0×10 20 cm -3

Development Information

Word Count: 5 Thousand words Pages: 4 pages

Replace the following standards

GB/T 8757-1988

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