GB/T 14264-1993
Replaced
GB/T 4937.34-2024
Active
National standards
GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34: Power cycling
GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34: Power cycling
Basic Information
Standard Code:
GB/T 4937.34-2024
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2024-03-15
Implement Date:
2024-07-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
中华人民共和国工业和信息化部
Pages:
16 pages
Scope
本文件描述了一种确定半导体器件对热应力和机械应力耐受能力的方法,通过对器件内部芯片和连接结构施加循环耗散功率来实现。试验时,周期性施加和移除正向偏置(负载电流),使其温度快速变化。本试验是模拟电力电子的典型应用,也是对高温工作寿命(见IEC 60749-23)的补充。其失效机理可能不同于空气对空气温度循环试验及双液槽法快速温变试验。本试验会导致损伤,是破坏性试验。
Development Information
Drafting Units:
中国电子科技集团公司第十三研究所
Drafting Persons:
张艳杰、崔万国、裴选
Same series standard
Referenced Standards
Adopt standards
IEC 60749-34:2010
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active