GB/T 4937.34-2024 Active National standards

GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34: Power cycling

Publish Date: 2024-03-15 Implement Date: 2024-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 4937.34-2024

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2024-03-15

Implement Date: 2024-07-01

Pages: 16 pages

Scope

This document describes a method for determining the resistance of semiconductor devices to thermal and mechanical stress, which is achieved by applying cyclic dissipative power to the internal chips and connection structures of the devices. During the test, forward bias (load current) is periodically applied and removed, causing rapid changes in the temperature of the device. This test simulates typical applications of power electronics and complements the high-temperature operating life test (see IEC 60749-23). Its failure mechanism may differ from that of air-to-air temperature cycling tests and rapid temperature change tests using double liquid tanks. This test can cause damage and is a destructive test.