PDF
GB/T 4058-2009 Active
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
Abstract
This standard specifies the inspection method for oxidation-induced defects in silicon wafers.
This standard is applicable to the detection of crystal defects induced or enhanced on the surface of silicon wafers during the oxidation process of analog devices.
The inspection of oxidation-induced defects in silicon single crystals can also refer to this method.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 4058-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
Price
$ 66
Subtotal
$ 66
Tax
$ 0.00
Order Total (incl. tax)
$ 66