GB/T 11093-1989
Replaced
GB/T 4058-2009
Active
National standards
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
Basic Information
Standard Code:
GB/T 4058-2009
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
18 pages
Scope
This standard specifies the inspection method for oxidation-induced defects in silicon wafers.
This standard is applicable to the detection of crystal defects induced or enhanced on the surface of silicon wafers during the oxidation process of analog devices.
The inspection of oxidation-induced defects in silicon single crystals can also refer to this method.
Development Information
Replace the following standards
Referenced Standards
YS/T 209
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced