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GB/T 31225-2014 Active
GB/T 31225-2014 Test method for the thickness of silicon oxide on Si substrate by ellipsometer
Abstract
This standard provides a method for measuring the thickness of a silicon dioxide thin layer on a silicon surface using a spectral elliptical polarimeter with continuous wavelength and angle variations.
This standard is applicable to testing the thickness of a silicon dioxide thin layer with uniform thickness and isotropy on a silicon substrate, ranging from 10 nm to 1,000 nm. For the measurement of the thickness of single-layer dielectric thin films on other substrates that are not transparent at the test wavelength, this method can be referenced.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 31225-2014 |
| CCS | Basic standards and general methods |
| ICS | Comprehensive measurement of length and angle |
| Implement Date | 2015-04-15 |
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