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GB/T 1554-2009 Active
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
Abstract
This standard specifies the method of testing the integrity of silicon crystals using the preferential corrosion technique.
This standard is applicable to the inspection of native defects in silicon single-crystal ingots or wafers with crystal orientations of 111, 100, or 110, resistivity ranging from 10-3 Ω·cm to 104 Ω·cm, and dislocation densities between 0 cm-2 and 105 cm-2.
This method is also suitable for silicon single-crystal wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 1554-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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$ 75
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$ 75
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$ 75