GB/T 11093-1989
Replaced
GB/T 1554-2009
Active
National standards
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
Basic Information
Standard Code:
GB/T 1554-2009
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
20 pages
Scope
This standard specifies the method of testing the integrity of silicon crystals using the preferential corrosion technique.
This standard is applicable to the inspection of native defects in silicon single-crystal ingots or wafers with crystal orientations of 111, 100, or 110, resistivity ranging from 10-3 Ω·cm to 104 Ω·cm, and dislocation densities between 0 cm-2 and 105 cm-2.
This method is also suitable for silicon single-crystal wafers.
Development Information
Replace the following standards
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced