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GB/T 30867-2014
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
Abstract
This standard specifies the test methods for the thickness and total thickness variation (TTV) of silicon carbide single crystals, including both contact and non-contact methods.
This standard applies to silicon carbide single crystals with a diameter of not less than 30 mm and a thickness of 0.13 mm to 1 mm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 30867-2014 |
| CCS | Compound semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2015-02-01 |
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$ 36