PDF

GB/T 30867-2014

GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

Available format(s)
PDF
Language(s)
Chinese
Publish Date
2014-07-24

Abstract

This standard specifies the test methods for the thickness and total thickness variation (TTV) of silicon carbide single crystals, including both contact and non-contact methods.
This standard applies to silicon carbide single crystals with a diameter of not less than 30 mm and a thickness of 0.13 mm to 1 mm.

General Product Information

Document Type National standards
Standard Status Replaced
Standard Code GB/T 30867-2014
CCS Compound semiconductor materials
ICS Semiconductor materials
Implement Date 2015-02-01
Price $ 36
Subtotal $ 36
Tax $ 0.00
Order Total (incl. tax) $ 36

Log In

Contact Us