GB/T 30867-2014 Replaced National standards

GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

Publish Date: 2014-07-24 Implement Date: 2015-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30867-2014

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-07-24

Implement Date: 2015-02-01

Pages: 8 pages

Scope

This standard specifies the test methods for the thickness and total thickness variation (TTV) of silicon carbide single crystals, including both contact and non-contact methods.
This standard applies to silicon carbide single crystals with a diameter of not less than 30 mm and a thickness of 0.13 mm to 1 mm.

Development Information

Word Count: 8 Thousand words Pages: 8 pages

Superseded by the following standards

GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers

Referenced Standards

GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06