GB/T 6616-2023 Active
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
Abstract
This document describes the method of testing the resistivity of semiconductor wafers and thin film layers using non-contact eddy current testing.
This document is suitable for testing the resistivity of silicon, conductive gallium arsenide, and conductive silicon carbide single wafers with a diameter or edge length of not less than 25.0 mm and a thickness of 0.1 mm to 1.0 mm, as well as the resistivity of thin film layers prepared on the substrate with a resistance not less than 1,000 times that of the film. The testing range of the resistivity of single wafers is 0.001 Ω·cm to 200 Ω·cm, and the testing range of the resistivity of thin film layers is 2.0×103 Ω/ to 3.0×103 Ω/. This method can also be extended to other semiconductor materials, but it is not suitable for determining the radial resistivity variation of wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 6616-2023 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2024-03-01 |