GB/T 6616-2023 Active National standards

GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge

Publish Date: 2023-08-06 Implement Date: 2024-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 6616-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2023-08-06

Implement Date: 2024-03-01

Pages: 10 pages

Scope

This document describes the method of testing the resistivity of semiconductor wafers and thin film layers using non-contact eddy current testing.
This document is suitable for testing the resistivity of silicon, conductive gallium arsenide, and conductive silicon carbide single wafers with a diameter or edge length of not less than 25.0 mm and a thickness of 0.1 mm to 1.0 mm, as well as the resistivity of thin film layers prepared on the substrate with a resistance not less than 1,000 times that of the film. The testing range of the resistivity of single wafers is 0.001 Ω·cm to 200 Ω·cm, and the testing range of the resistivity of thin film layers is 2.0×103 Ω/ to 3.0×103 Ω/. This method can also be extended to other semiconductor materials, but it is not suitable for determining the radial resistivity variation of wafers.