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GB/T 20176-2025 Active
GB/T 20176-2025 Surface chemical analysis—Secondary-ion mass spectrometry—Determination of boron atomic concentration in silicon using uniformly doped materials
Abstract
This document details the secondary ion mass spectrometry method for determining the atomic concentration of boron in single-crystal silicon using a calibrated uniformly doped material (calibrated with a reference material injected with boron). It is suitable for uniformly doped boron concentrations ranging from 1×1016 atoms/cm3 to 1×1020 atoms/cm3.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 20176-2025 |
| CCS | Basic standards and general methods |
| ICS | Chemical analysis |
| Implement Date | 2026-01-01 |
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