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GB/T 43612-2023 Active
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
Abstract
This document specifies the morphological characteristics, causes, and defect maps of conductive 4H silicon carbide (4HSiC) crystal materials. This document is applicable to the research, development, production, and inspection and analysis of silicon carbide (crystal ingots, substrate wafers, epitaxial wafers, and subsequent processes) in the semiconductor industry.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 43612-2023 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2024-07-01 |
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