GB/T 14264-1993
Replaced
T/CASAS 004.1-2018
Active
Group standards
T/CASAS 004.1-2018 Defect terminology for 4H silicon carbide substrates and epitaxial layers
T/CASAS 004.1-2018 Defect terminology for 4H silicon carbide substrates and epitaxial layers
Price:
$ 20.00
Basic Information
Standard Code:
T/CASAS 004.1-2018
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical and chemical properties of metals
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2018-11-20
Implement Date:
2018-11-20
Scope
Main technical content: Due to the fact that the shapes, types, and causes of 4H-SiC defects, especially 4H-SiC epitaxial defects, differ from or are completely different from those of other common semiconductor defects due to the different epitaxial growth modes, and there are currently no applicable national standards or industry standards, this standard is specifically formulated to standardize the terminology and definitions of 4H-SiC defects
Development Information
Same series standard
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active