T/CASAS 004.2-2018 Active Group standards

T/CASAS 004.2-2018 Silicon carbide substrate and epitaxial layer defect spectrum (4H)

Publish Date: 2018-11-20 Implement Date: 2018-11-20 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 004.2-2018

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2018-11-20

Implement Date: 2018-11-20

Scope

Main technical content: Due to the fact that 4H-SiC defects, especially 4H-SiC epitaxial defects, differ or are completely different from the shapes, types, and causes of other common semiconductor defects due to the different epitaxial growth modes, and there are currently no applicable national or industry standards, this standard has been developed to standardize the terminology and definitions of 4H-SiC defects. This standard was developed and published by the Standardization Committee of the Third-Generation Semiconductor Industry Technology Innovation Strategic Alliance (CASAS), and the copyright belongs to CASA. It is not allowed to copy it without CASA's permission. Other organizations wishing to adopt the technical content of this standard for standard development must obtain CASA's approval. Any unit or individual citing the content of this standard must indicate the standard number of this standard.