GB/T 14144-2009 Active
GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
Abstract
This standard uses infrared spectroscopy to determine the radial variation of interstitial oxygen content in silicon crystals. This standard requires the use of an oxygen-free reference sample and a set of certified standard samples for calibrating equipment.
This standard is applicable to the measurement of interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm.
The effective range of oxygen content measured by this standard is from 1×1016 atoms/cm3 to the maximum solubility of interstitial oxygen in silicon crystals.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 14144-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |