GB/T 14144-2009
Active
National standards
GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
Basic Information
Standard Code:
GB/T 14144-2009
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2009-10-30
Implement Date:
2010-06-01
Pages:
8 pages
Scope
This standard uses infrared spectroscopy to determine the radial variation of interstitial oxygen content in silicon crystals. This standard requires the use of an oxygen-free reference sample and a set of certified standard samples for calibrating equipment.
This standard is applicable to the measurement of interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm.
The effective range of oxygen content measured by this standard is from 1×1016 atoms/cm3 to the maximum solubility of interstitial oxygen in silicon crystals.
Development Information
Replace the following standards
Referenced Standards
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Adopt standards
SEMI MF 1188-1105
Related Standards
GB/T 11093-1989
Replaced
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced