GB/T 14144-2009 Active National standards

GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon

GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14144-2009
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Semi-metals and semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2009-10-30
Implement Date: 2010-06-01
Pages: 8 pages

Scope

This standard uses infrared spectroscopy to determine the radial variation of interstitial oxygen content in silicon crystals. This standard requires the use of an oxygen-free reference sample and a set of certified standard samples for calibrating equipment.
This standard is applicable to the measurement of interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm.
The effective range of oxygen content measured by this standard is from 1×1016 atoms/cm3 to the maximum solubility of interstitial oxygen in silicon crystals.

Development Information

Word Count: 13 Thousand words Pages: 8 pages

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