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GB/T 24576-2009 Active
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction
Abstract
This standard specifies the test method for measuring the Al content in the AlGaAs epitaxial layer on a GaAs substrate using high-resolution X-ray diffraction.
This method is suitable for determining the Al content in the AlGaAs epitaxial layer grown on an undoped GaAs substrate in the <001> direction. When using this method to measure the Al element content, the thickness of the AlGaAs epitaxial layer should be greater than 300 nm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 24576-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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