GB/T 24576-2009 Active National standards

GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 24576-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 8 pages

Scope

This standard specifies the test method for measuring the Al content in the AlGaAs epitaxial layer on a GaAs substrate using high-resolution X-ray diffraction.
This method is suitable for determining the Al content in the AlGaAs epitaxial layer grown on an undoped GaAs substrate in the <001> direction. When using this method to measure the Al element content, the thickness of the AlGaAs epitaxial layer should be greater than 300 nm.