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GB/T 45716-2025 Active
GB/T 45716-2025 Semiconductor devices—Bias-temperature instability test for metal-oxide semiconductor field-effect transistors(MOSFETs)
Abstract
This document describes the bias temperature instability (BTI) test method for metal oxide semiconductor field-effect transistors (MOSFETs).
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 45716-2025 |
| CCS | Semiconductor discrete devices |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2025-09-01 |
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