GB/T 45716-2025 Active National standards

GB/T 45716-2025 Semiconductor devices—Bias-temperature instability test for metal-oxide semiconductor field-effect transistors(MOSFETs)

Publish Date: 2025-05-30 Implement Date: 2025-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 45716-2025

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2025-05-30

Implement Date: 2025-09-01

Pages: 16 pages

Scope

This document describes the bias temperature instability (BTI) test method for metal oxide semiconductor field-effect transistors (MOSFETs).

Development Information

Word Count: 19 Thousand words Pages: 16 pages

Adopt standards

IEC 62373:2006

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