T/IAWBS 016-2022 Active
T/IAWBS 016-2022 Carbon-doped silicon monocrystal X-ray double crystal waver curve half-width testing method
Abstract
Scope: This document specifies the method of testing the half-peak width of the swing curve of silicon carbide single crystals using a double-crystal X-ray diffractometer. This document is applicable to silicon carbide single crystals grown by physical vapor deposition and other methods. This document is applicable to the detection of the swing curve of silicon carbide single crystals at room temperature in the normal orientation and with an inclined angle; Main technical content: This document specifies the measurement principles, measurement accuracy assurance, and measurement steps of the swing curve of silicon carbide single crystals based on the material performance characteristics of silicon carbide single crystals and the current research level of silicon carbide crystal quality detection technology in China. The main structure and content of this document are as follows: The document is divided into 9 chapters, and the main contents include: Scope, Normative References, Terms and Definitions, Test Principles, Test Instruments, Interference Factors, Test Environment, Test Samples, Test Procedures, Precision, Test Reports, and Appendices.
General Product Information
| Document Type | Group standards |
|---|---|
| Standard Status | Active |
| Standard Code | T/IAWBS 016-2022 |
| CCS | \nTest methods for the physical and chemical properties of metals |
| ICS | Semiconductor materials |
| Implement Date | 2022-03-24 |