GB/T 1551-2021 Active
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
Abstract
This document specifies the methods for testing the resistivity of silicon single crystals using the direct four-probe method and the DC two-probe method.
This document is applicable to the testing of resistivity of silicon single crystals. The resistivity range of p-type silicon single crystals that can be tested by the direct four-probe method is 7×10-4 Ω·cm to 8×103 Ω·cm, and the resistivity range of n-type silicon single crystals is 7×10-4 Ω·cm to 1.5×104 Ω·cm; the DC two-probe method is suitable for testing the resistivity of silicon single crystals with uniform cross-sectional areas, including circular, square, or rectangular shapes, with a testing range of 1×103 Ω·cm to 1×104 Ω·cm, and the ratio of the sample length to the maximum cross-sectional size should be no less than 3:1. The testing of resistivity in other ranges of silicon single crystals can be carried out by referring to this document.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 1551-2021 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2021-12-01 |