GB/T 1551-2021 Active National standards

GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method

Publish Date: 2021-05-21 Implement Date: 2021-12-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 1551-2021

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2021-05-21

Implement Date: 2021-12-01

Pages: 24 pages

Scope

This document specifies the methods for testing the resistivity of silicon single crystals using the direct four-probe method and the DC two-probe method.
This document is applicable to the testing of resistivity of silicon single crystals. The resistivity range of p-type silicon single crystals that can be tested by the direct four-probe method is 7×10-4 Ω·cm to 8×103 Ω·cm, and the resistivity range of n-type silicon single crystals is 7×10-4 Ω·cm to 1.5×104 Ω·cm; the DC two-probe method is suitable for testing the resistivity of silicon single crystals with uniform cross-sectional areas, including circular, square, or rectangular shapes, with a testing range of 1×103 Ω·cm to 1×104 Ω·cm, and the ratio of the sample length to the maximum cross-sectional size should be no less than 3:1. The testing of resistivity in other ranges of silicon single crystals can be carried out by referring to this document.