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YS/T 23-2016 Active
YS/T 23-2016 Test method for thickness of epitaxial layers—Stacking fault size
Abstract
This standard specifies a method for measuring the thickness of silicon epitaxial layers using the stacking dislocation size method.
This standard is applicable to the measurement of the thickness of silicon epitaxial layers grown on silicon single-crystal substrates with crystal orientations of 111, 100, and 110, ranging in thickness from 2 μm to 120 μm.
General Product Information
| Document Type | Industry standards-Non-ferrous metals |
|---|---|
| Standard Status | Active |
| Standard Code | YS/T 23-2016 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2016-09-01 |
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