GB/T 3656-1983
Replaced
YS/T 23-2016
Active
Industry standards-Non-ferrous metals
YS/T 23-2016 Test method for thickness of epitaxial layers—Stacking fault size
YS/T 23-2016 Test method for thickness of epitaxial layers—Stacking fault size
Basic Information
Standard Code:
YS/T 23-2016
Standard Type:
Industry standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2016-04-05
Implement Date:
2016-09-01
Pages:
7 pages
Scope
This standard specifies a method for measuring the thickness of silicon epitaxial layers using the stacking dislocation size method.
This standard is applicable to the measurement of the thickness of silicon epitaxial layers grown on silicon single-crystal substrates with crystal orientations of 111, 100, and 110, ranging in thickness from 2 μm to 120 μm.
Development Information
Replace the following standards
Referenced Standards
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced