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YS/T 24-2016 Active
YS/T 24-2016 Test methods for spike of epitaxial layers
Abstract
This standard specifies the inspection method for dicing defects.
This standard is applicable to determining whether there are dicing defects with a height of not less than 4 mm on silicon epitaxial wafers. If there are a relatively small number of dicing defects that are not connected to each other, the number of dicing defects can be counted. This standard cannot measure the height of dicing defects.
General Product Information
| Document Type | Industry standards-Non-ferrous metals |
|---|---|
| Standard Status | Active |
| Standard Code | YS/T 24-2016 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2016-09-01 |
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