PDF
GB/T 41765-2022 Active
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
Abstract
This document specifies the testing method for the dislocation density of silicon carbide single crystals.
This document is applicable to the testing of the dislocation density of silicon carbide single crystals with crystal planes deviating from the {0001} plane and oriented towards the 112-0 direction at an angle of 0° to 8°.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 41765-2022 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2023-05-01 |
Price
$ 65
Subtotal
$ 65
Tax
$ 0.00
Order Total (incl. tax)
$ 65