GB/T 3656-1983
Replaced
GB/T 41765-2022
Active
National standards
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
Price:
$ 65
Basic Information
Standard Code:
GB/T 41765-2022
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2022-10-12
Implement Date:
2023-05-01
Pages:
11 pages
Scope
This document specifies the testing method for the dislocation density of silicon carbide single crystals.
This document is applicable to the testing of the dislocation density of silicon carbide single crystals with crystal planes deviating from the {0001} plane and oriented towards the 112-0 direction at an angle of 0° to 8°.
Development Information
Referenced Standards
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced