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GB/T 41853-2022 Active
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
Abstract
This document specifies the measurement method for the bonding strength of wafers after bonding, which is applicable to various wafer bonding methods such as silicon-silicon eutectic bonding and silicon-glass anode bonding, as well as the evaluation of the bonding strength of relevant structural dimensions in MEMS processes and assembly procedures.
This document is suitable for measuring the bonding strength between wafers with thicknesses ranging from ten micrometers to several millimeters.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 41853-2022 |
| CCS | Microcircuit |
| ICS | Other discrete semiconductor devices |
| Implement Date | 2022-10-12 |
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$ 75
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$ 75
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$ 75