GB/T 4298-1984
Abolished
GB/T 41853-2022
Active
National standards
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
Price:
$ 75
Basic Information
Standard Code:
GB/T 41853-2022
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Microcircuit
ICS Name:
Other discrete semiconductor devices
Publish Date:
2022-10-12
Implement Date:
2022-10-12
Pages:
20 pages
Scope
This document specifies the measurement method for the bonding strength of wafers after bonding, which is applicable to various wafer bonding methods such as silicon-silicon eutectic bonding and silicon-glass anode bonding, as well as the evaluation of the bonding strength of relevant structural dimensions in MEMS processes and assembly procedures.
This document is suitable for measuring the bonding strength between wafers with thicknesses ranging from ten micrometers to several millimeters.
Development Information
Referenced Standards
IEC 60749-19
Adopt standards
IEC 62047-9:2011
Related Standards
GB/T 15449-1995
Active
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application
GB/T 15450-1995
Abolished
GB/T 15450-1995 Blank detail specification for silicon dual-gate field-effect transistors
GB/T 15529-1995
Active
GB/T 15529-1995 Blank detail specification for LED numeric displays
GB/T 32817-2016
Active
GB/T 32817-2016 Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS
GB/T 41852-2022
Active