GB/T 1553-2023 Active
GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method
Abstract
This document specifies the photoelectric conductivity decay test method for non-intrinsic silicon and germanium single crystals during the carrier recombination process. This document is applicable to the testing of non-equilibrium minority carriers' lifetime in non-intrinsic silicon and germanium single crystals. The direct current photoelectric conductivity decay pulse light method can test samples with special sizes, such as rectangles or cylinders. The minimum lifetime value of silicon single crystals tested is 50 μs, and the minimum lifetime value of germanium single crystals tested is 10 μs. The high-frequency photoelectric conductivity decay method can test rod-shaped or block-shaped samples. The minimum lifetime value of silicon and germanium single crystals tested is 10 μs. Note: There are two direct current photoelectric conductivity decay methods: the direct current photoelectric conductivity decay pulse light method and the direct current photoelectric conductivity decay chopper light method (see Appendix A).
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 1553-2023 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2024-03-01 |