GB/T 1553-2023 Active National standards

GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method

Publish Date: 2023-08-06 Implement Date: 2024-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 1553-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2023-08-06

Implement Date: 2024-03-01

Pages: 27 pages

Scope

This document specifies the photoelectric conductivity decay test method for non-intrinsic silicon and germanium single crystals during the carrier recombination process. This document is applicable to the testing of non-equilibrium minority carriers' lifetime in non-intrinsic silicon and germanium single crystals. The direct current photoelectric conductivity decay pulse light method can test samples with special sizes, such as rectangles or cylinders. The minimum lifetime value of silicon single crystals tested is 50 μs, and the minimum lifetime value of germanium single crystals tested is 10 μs. The high-frequency photoelectric conductivity decay method can test rod-shaped or block-shaped samples. The minimum lifetime value of silicon and germanium single crystals tested is 10 μs. Note: There are two direct current photoelectric conductivity decay methods: the direct current photoelectric conductivity decay pulse light method and the direct current photoelectric conductivity decay chopper light method (see Appendix A).