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GB/T 20176-2006 Active
GB/T 20176-2006 Surface chemical analysis—Secondary-ion mass spectrometry—Determination of boron atomic concentration in silicon using uniformly doped materials
Abstract
This standard details the secondary ion mass spectrometry method for determining the atomic concentration of boron in single-crystal silicon using calibrated uniformly doped materials (calibrated with reference materials injected with boron). It is suitable for uniformly doped boron concentrations ranging from 1×10 16 atoms/cm 3 to 1×10 20 atoms/cm 3.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 20176-2006 |
| CCS | Electronic optics and other physical optical instruments |
| ICS | Chemical analysis |
| Implement Date | 2006-11-01 |
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