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GB/T 42905-2023 Active
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
Abstract
This document describes a method of testing the thickness of the epitaxial layer of silicon carbide using infrared reflection.
This document is suitable for testing the thickness of homogeneous silicon carbide epitaxial layers with a doping concentration of less than 1×1016 cm-3 on n-type silicon carbide substrates with a doping concentration of greater than 1×1018 cm-3, with a test range of 3 μm to 200 μm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 42905-2023 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2024-03-01 |
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